2SK3666-2-TB-E - JFET N-CH 10MA 200MW CP

ON Semiconductor
Discrete Semiconductor Products - JFETs (Junction Field Effect)

JFET N-CH 10MA 200MW CP
FET Type     
Voltage - Breakdown     
Drain to Source Voltage     
Current - Drain     
Current Drain Max    
Voltage - Cutoff     
Input Capacitance     
Resistance     
Mounting Type     
Package / Case     
Supplier Device Package     
Power - Max    
    
N-Channel
-
30V
600µA @ 10V
10mA
180mV @ 1µA
4pF @ 10V
200 Ohm
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
200mW


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