2SK879-GR(TE85L,F) - JFET N-CH 0.1W USM

Toshiba Semiconductor and Storage
Discrete Semiconductor Products - JFETs (Junction Field Effect)

JFET N-CH 0.1W USM
FET Type     
Voltage - Breakdown     
Drain to Source Voltage     
Current - Drain     
Current Drain Max    
Voltage - Cutoff     
Input Capacitance     
Resistance     
Mounting Type     
Package / Case     
Supplier Device Package     
Power - Max    
    
N-Channel
-
-
2.6mA @ 10V
-
400mV @ 100nA
8.2pF @ 10V
-
Surface Mount
SC-70, SOT-323
USM
100mW


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